AOD200 30v n-channel mosfet general description product summary v ds i d (at v gs =10v) 36a r ds(on) (at v gs =10v) < 7.8m w r ds(on) (at v gs = 4.5v) < 11m w 100% uis tested 100% r g tested symbol v ds v v 20 gate-source voltage drain-source voltage 30 the AOD200 uses trench mosfet technology that is uniquely optimized to provide the most efficient hi gh frequency switching performance.power losses are minimized due to an extremely low combination of rd s(on) and crss.in addition,switching behavior is well controlled with a "schottky style" soft recovery bo dy diode. v maximum units parameter absolute maximum ratings t a =25c unless otherwise noted 30v g d s to252 dpak top view bottom view g s d g s d v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jc c thermal characteristics units maximum junction-to-ambient a c/w r q ja 15 41 20 parameter typ max junction and storage temperature range -55 to 175 v 20 gate-source voltage avalanche energy l=0.1mh c mj avalanche current c 11 a 39 28 a t a =25c i dsm a t a =70c 120 pulsed drain current c continuous drain current g i d 36 28 t c =25c t c =100c continuous drain current 14 w power dissipation a p dsm w t a =70c 50 1.6 t a =25c t c =25c 2.5 25 t c =100c power dissipation b p d maximum junction-to-case c/w c/w maximum junction-to-ambient a d 2.1 50 3 g d s to252 dpak top view bottom view g s d g s d rev 0: november 2010 www.aosmd.com page 1 of 6
AOD200 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.85 2.4 v i d(on) 120 a 6.3 7.8 t j =125c 9.5 11.5 8.7 11 m w g fs 60 s v sd 0.7 1 v i s 36 a c iss 860 1084 1300 pf c oss 325 470 615 pf c rss 7 24 40 pf r g 0.3 0.7 1.1 w q g (10v) 10 12.8 16 nc q g (4.5v) 3.5 5.3 7 nc q gs 3.2 nc q gd 1.2 nc t d(on) 6.7 ns t 2.1 ns m w r ds(on) i s =1a,v gs =0v output capacitance turn-on delaytime dynamic parameters turn-on rise time v gs =10v, v ds =15v, i d =20a gate source charge gate drain charge total gate charge reverse transfer capacitance switching parameters maximum body-diode continuous current g input capacitance v =10v, v =15v, r =0.75 w , gate resistance v gs =0v, v ds =0v, f=1mhz total gate charge v gs =0v, v ds =15v, f=1mhz v gs =4.5v, i d =15a forward transconductance diode forward voltage on state drain current v gs =10v, v ds =5v v gs =10v, i d =20a static drain-source on-resistance v ds =5v, i d =20a i dss m a v ds =v gs i d =250 m a v ds =0v, v gs = 20v electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions drain-source breakdown voltage i d =250 m a, v gs =0v zero gate voltage drain current gate-body leakage current t r 2.1 ns t d(off) 15.5 ns t f 2.0 ns t rr 11 14 17 ns q rr 24 30 36 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =20a, di/dt=500a/ m s turn-off delaytime turn-on rise time i f =20a, di/dt=500a/ m s body diode reverse recovery time v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25
AOD200 typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 50 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 3 6 9 12 15 0 5 10 15 20 25 30 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 1.8 2 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =15a v gs =10v i d =20a 25
AOD200 typical electrical and thermal characteristics 17 52 10 0 18 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 1600 1800 0 5 10 15 20 25 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss 0 40 80 120 160 200 0.0001 0.001 0.01 0.1 1 10 power (w) pulse width (s) figure 10: single pulse power rating junction-to-ca se (note f) c oss c rss v ds =15v i d =20a t j(max) =175
AOD200 typical electrical and thermal characteristics 17 52 10 0 18 0 10 20 30 40 50 60 0 25 50 75 100 125 150 power dissipation (w) t case (
AOD200 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off id + l vgs vds bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 0: november 2010 www.aosmd.com page 6 of 6
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